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| 02/02/04 www.irf.com 1 irf3703pbf smps mosfet hexfet power mosfet synchronous rectification benefits applications low gate impedance to reduce switching losses fully avalanche rated v dss r ds(on) max i d 30v 2.8m ? 210a absolute maximum ratings notes through are on page 8 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 210 i d @ t c = 100c continuous drain current, v gs @ 10v 100 a i dm pulsed drain current 1000 p d @t c = 25c power dissipation 230 w p d @t a = 25c power dissipation 3.8 linear derating factor 1.5 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt 5.0 v/ns t j, t stg junction and storage temperature range -55 to + 175 c parameter typ. max. units r jc junction-to-case ??? 0.65 r cs case-to-sink, flat, greased surface 0.5 ??? c/w r ja junction-to-ambient ??? 62 ultra low on-resistance active oring to-220ab lead-free 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.028 ??? v/c reference to 25c, i d = 1ma ??? 2.3 2.8 v gs = 10v, i d = 76a ??? 2.8 3.9 v gs = 7.0v, i d = 76a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a ??? ??? 20 a v ds = 24v, v gs = 0v ??? ??? 250 v ds = 24v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 200 v gs = 20v gate-to-source reverse leakage ??? ??? -200 na v gs = -20v parameter min. typ. max. units conditions g fs forward transconductance 150 ??? ??? s v ds = 24v, i d = 76a q g total gate charge ??? 209 ??? i d = 76a q gs gate-to-source charge ??? 62 ??? nc v ds = 24v q gd gate-to-drain ("miller") charge ??? 42 ??? v gs = 10v, t d(on) turn-on delay time ??? 18 ??? v dd = 15v, v gs = 10v t r rise time ??? 123 ??? i d = 76a t d(off) turn-off delay time ??? 53 ??? r g = 1.8 ? t f fall time ??? 24 ??? v gs = 10v c iss input capacitance ??? 8250 ??? v gs = 0v c oss output capacitance ??? 3000 ??? v ds = 25v c rss reverse transfer capacitance ??? 290 ??? pf ? = 1.0mhz c oss output capacitance ??? 10360 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 3060 ??? v gs = 0v, v ds = 24v, ? = 1.0mhz c oss eff. effective output capacitance ??? 2590 ??? v gs = 0v, v ds = 0v to 24v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 1700 mj i ar avalanche current ??? 76 a e ar repetitive avalanche energy ??? 23 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? 0.8 1.3 v t j = 25c, i s = 76a, v gs = 0v t rr reverse recovery time ??? 80 120 ns t j = 25c, i f = 76a, v ds = 16v q rr reverse recoverycharge ??? 185 275 nc di/dt = 100a/s diode characteristics 210 1000 static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance m ? www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 10000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 10000 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 210aa 4 www.irf.com 1 10 100 0 2000 4000 6000 8000 10000 12000 14000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 0.1 1 10 100 1000 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 10 100 1000 10000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 0 40 80 120 160 200 240 280 320 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 76a v = 24v ds www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms 1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 40 80 120 160 200 240 t , case temperature ( c) i , drain current (a) c d limited by package 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 1000 2000 3000 4000 5000 6000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 31a 54a 76a www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel ? ? ? ! " # $$ ? % &" " & ? ' ( !" ? )" * ? ' + !" &" 8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/04 repetitive rating; pulse width limited by max. junction temperature. i sd 76a, di/dt 100a/s, v dd v (br)dss , t j 175c starting t j = 25c, l = 0.6mh r g = 25 ? , i as = 76a. pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copack 1- gate 2- collector 3- emitter 4- collector example: in the assembly line "c" t his is an irf1010 lot code 1789 as s e mb le d on ww 19, 1997 part number as s e mb l y lot code date code year 7 = 1997 line c week 19 logo rectifier int e r nat ional note: "p" in assembly line position indicates "lead-free" note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ |
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